Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers
نویسندگان
چکیده
منابع مشابه
Carrier Lifetime and Recombination in Long-Wavelength Quantum-Well Lasers
We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intr...
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Different possible processes of non-radiative Auger recombination which occur in the active region of quantum-well lasers are analyzed and the temperature dependence of the lasing threshold in the GaInAs-GaInAsP-InP bi-quantum-well heterolasers with different widths of the quantum wells (4 and 9 nm) is determined. Activated behavior of the Auger recombination is mentioned and respective effecti...
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Y. D. Jho,1,* X. Wang,2 D. H. Reitze,2,3 J. Kono,4 A. A. Belyanin,5 V. V. Kocharovsky,5,6 Vl. V. Kocharovsky,6 and G. S. Solomon7 1Department of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea 2Department of Physics, University of Florida, Gainesville, Florida 32611, USA 3National High Magnetic Field Laboratory, Florida State Unive...
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We investigate photoluminescence from a high-density electron-hole plasma in semiconductor quantum wells created via intense femtosecond excitation in a strong perpendicular magnetic field, a fully quantized and tunable system. At a critical magnetic field strength and excitation fluence, we observe a clear transition in the band-edge photoluminescence from omnidirectional output to a randomly ...
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ژورنال
عنوان ژورنال: American Journal of Optics and Photonics
سال: 2015
ISSN: 2330-8486
DOI: 10.11648/j.ajop.20150305.14